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philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch description quick reference data monolithic single channel high side symbol parameter min. unit protected power switch in topfet2 technology assembled in i l nominal load current (iso) 9 a a 5 pin plastic package. applications symbol parameter max. unit general controller for driving v bg continuous off-state supply voltage 50 v lamps, motors, solenoids, heaters. i l continuous load current 20 a t j continuous junction temperature 150 ?c r on on-state resistance t j = 25?c 38 m ? features functional block diagram vertical power trenchmos low on-state resistance cmos logic compatible very low quiescent current overtemperature protection load current limiting latched overload and short circuit protection overvoltage and undervoltage shutdown with hysteresis on-state open circuit load detection diagnostic status indication voltage clamping for turn off of inductive loads esd protection on all pins reverse battery, overvoltage and transient protection fig.1. elements of the topfet hss with internal ground resistor. pinning - sot263b-01 pin configuration symbol pin description 1 i nput 2 f lag 3 d rain 4 p rotection supply 5 s ource fig. 2. fig. 3. tab d rain batt load input ground status power mosfet rg control & protection circuits 12345 mbl267 front view mb mb d s i topfet p f p november 2002 1 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch limiting values limiting values in accordance with the absolute maximum system (iec 134) symbol parameter conditions min. max. unit v bg continuous supply voltage 0 50 v i l continuous load current t mb 95 ? c - 20 a p d total power dissipation t mb 25 ? c - 67 w t stg storage temperature -55 175 ? c t j continuous junction temperature 1 - 150 ? c t sold lead temperature during soldering - 260 ? c reverse battery voltages 2 -v bg continuous reverse voltage - 16 v -v bg peak reverse voltage - 32 v application information r i , r s external resistors 3 to limit input, status currents 3.2 - k ? input and status i i , i s continuous currents -5 5 ma i i , i s repetitive peak currents 0.1, tp = 300 s -50 50 ma inductive load clamping i l = 10 a, v bg = 16 v e bl non-repetitive clamping energy t j = 150 ? c prior to turn-off - 150 mj esd limiting value symbol parameter conditions min. max. unit v c electrostatic discharge capacitor human body model; - 2 kv voltage c = 250 pf; r = 1.5 k ? thermal characteristics symbol parameter conditions min. typ. max. unit thermal resistance 4 r th j-mb junction to mounting base - - 1.52 1.86 k/w r th j-a junction to ambient in free air - 60 75 k/w 1 for normal continuous operation. a higher t j is allowed as an overload condition but at the threshold t j(to) the over temperature trip operates to protect the switch. 2 reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. the co nnected load must limit the reverse load current. the internal ground resistor limits the reverse battery ground current. power is dissipated a nd the t j rating must be observed. 3 to limit currents during reverse battery and transient overvoltages (positive or negative). 4 of the output power mos transistor. november 2002 2 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch static characteristics limits are at -40 ? c t mb 150 ? c and typicals at t mb = 25 ? c unless otherwise stated. symbol parameter conditions min. typ. max. unit clamping voltages v bg battery to ground i g = 1 ma 50 55 65 v v bl battery to load i l = i g = 1 ma 50 55 65 v -v lg negative load to ground i l = 10 ma 18 23 28 v -v lg negative load voltage 1 i l = 10 a; t p = 300 s202530v supply voltage battery to ground v bg operating range 2 5.5 - 35 v currents 9 v v bg 16 v i b quiescent current 3 v lg = 0 v - - 20 a t mb = 25 ? c - 0.1 2 a i l off-state load current 4 v bl = v bg --20 a t mb = 25 ? c - 0.1 1 a i g operating current 5 i l = 0 a - 2 4 ma i l nominal load current 6 v bl = 0.5 v t mb = 85 ? c9 - - a resistances v bg i l t p 7 t mb r on on-state resistance 9 to 35 v 10 a 300 s25 ? c - 28 38 m ? 150 ? c- - 70 m ? r on on-state resistance 6 v 10 a 300 s25 ? c - 36 48 m ? 150 ? c- - 88 m ? r g internal ground resistance i g = 10 ma 95 150 190 ? 1 for a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. 2 on-state resistance is increased if the supply voltage is less than 9 v. 3 this is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 the measured current is in the load pin only. 5 this is the continuous current drawn from the supply with no load connected, but with the input high. 6 defined as in iso 10483-1. for comparison purposes only. this parameter will not be characterised for automotive ppap. 7 the supply and input voltage for the r on tests are continuous. the specified pulse duration t p refers only to the applied load current. november 2002 3 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch input characteristics 9 v v bg 16 v. limits are at -40 ? c t mb 150 ? c and typicals at t mb = 25 ? c unless otherwise stated. symbol parameter conditions min. typ. max. unit i i input current v ig = 5 v 20 90 160 a v ig input clamping voltage i i = 200 a 5.5 7 8.5 v v ig(on) input turn-on threshold voltage - 2.4 3 v v ig(off) input turn-off threshold voltage 1.5 2.1 - v ? v ig input turn-on hysteresis - 0.3 - v i i(on) input turn-on current v ig = 3 v - - 100 a i i(off) input turn-off current v ig = 1.5 v 10 - - a status characteristics the status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. limits are at -40 ? c t mb 150 ? c and typicals at t mb = 25 ? c unless otherwise stated. refer to truth table . symbol parameter conditions min. typ. max. unit v sg status clamping voltage i s = 100 a 5.5 7 8.5 v v sg status low voltage i s = 100 a--1v t mb = 25 ? c - 0.7 0.8 v i s status leakage current v sg = 5 v - - 15 a t mb = 25 ? c - 0.1 1 a i s status saturation current 1 v sg = 5 v 2 7 12 ma application information r s external pull-up resistor - 47 - k ? open circuit detection characteristics an open circuit load can be detected in the on-state. refer to truth table . limits are at -40 ? c t mb 150 ? c and typical is at t mb = 25 ? c. symbol parameter conditions min. typ. max. unit open circuit detection 9 v v bg 35 v i l(to) low current detect threshold 0.24 - 1.6 a t j = 25 ? c 0.4 0.8 1.2 a ? i l(to) hysteresis - 0.16 - a 1 in a fault condition with the pull-up resistor short circuited while the status transistor is conducting. this condition shoul d be avoided in order to prevent possible interference with normal operation of the device. november 2002 4 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch undervoltage & overvoltage characteristics limits are at -40 ? c t mb 150 ? c and typicals at t mb = 25 ? c. refer to truth table . symbol parameter conditions min. typ. max. unit undervoltage v bg(uv) low supply threshold voltage 1 2 4.2 5.5 v ? v bg(uv) hysteresis - 0.5 - v overvoltage v bg(ov) high supply threshold voltage 2 40 45 50 v ? v bg(ov) hysteresis - 1 - v truth table abnormal conditions detected load input supply load output status description uv ov lc sc ot l x x x x x off h off h 0 0 0 0 0 on h on & normal h 0 0 1 0 0 on l on & low current detect h 1 0 x x x off h supply undervoltage lockout h 0 1 x 0 0 off h supply overvoltage shutdown h 0 0 0 1 x off l sc tripped h 0 0 0 0 1 off l ot shutdown 3 key to abbreviations l logic low uv undervoltage h logic high ov overvoltage x don t care lc low current or open circuit load 0 condition not present sc short circuit 1 condition present ot overtemperature 1 undervoltage sensor causes the device to switch off and reset. 2 overvoltage sensor causes the device to switch off to protect its load. 3 the status will continue to indicate ot (even if the input goes low) until the device cools below the reset threshold. refer t o overload protection characteristics . november 2002 5 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch overload protection characteristics 5.5 v v bg 35 v, limits are at -40 ? c t mb 150 ? c and typicals at t mb = 25 ? c unless otherwise stated. refer to truth table . symbol parameter conditions min. typ. max. unit overload protection v bl = v bg i l(lim) load current limiting v bg 9 v 34 45 64 a short circuit load protection v bl(to) battery load threshold voltage 1 v bg = 16 v 8 10 12 v v bg = 35 v 15 20 25 v t d sc response time 2 v bl > v bl(to) - 180 250 s overtemperature protection t j(to) threshold junction 150 170 190 ? c temperature 3 ? t j(to) hysteresis - 10 - ? c switching characteristics t mb = 25 ? c, v bg = 13 v, for resistive load r l = 13 ? . symbol parameter conditions min. typ. max. unit during turn-on from input going high t d on delay time to 10% v l -4060 s dv/dt on rate of rise of load voltage 30% to 70% v l - 0.35 1 v/ s t on total switching time to 90% v l - 140 200 s during turn-off from input going low t d off delay time to 90% v l -5580 s dv/dt off rate of fall of load voltage 70% to 30% v l - 0.6 1 v/ s t off total switching time to 10% v l - 85 120 s capacitances t mb = 25 ? c; f = 1 mhz; v ig = 0 v. designed in parameters . symbol parameter conditions min. typ. max. unit c ig input capacitance v bg = 13 v - 15 20 pf c bl output capacitance v bl = 13 v - 250 350 pf c sg status capacitance v sg = 5 v - 11 15 pf 1 the battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. after short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 2 measured from when the input goes high. 3 after cooling below the reset temperature the switch will resume normal operation. november 2002 6 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch fig.4. high side switch measurements schematic. (current and voltage conventions) fig.5. typical on-state resistance, t p = 300 s. r on = f(t j ); parameter v bg ; condition i l = 10 a fig.6. typical on-state characteristics, t j = 25 ?c. i l = f(t j ); parameter v bg ; t p = 250 s fig.7. typical supply characteristics, 25 ?c. i g = f(v bg ); parameter v ig fig.8. typical on-state resistance,t j = 25 ?c. r on = f(v bg ); condition i l = 10 a; t p = 300 s fig.9. typical operating supply current. i g = f(t j ); parameters i l , v bg ; condition v ig = 5 v l i s topfet hss b g ib ig ii is il vbg vig vsg rs vlg load vbl 0 1 2 3 4 5 0 10203040506070 v bg / v i bg(on) / ma operating v ig = 5 v clamping overvoltage shutdown undervoltage shutdown quiescent v ig = 0 v BUK210-50Y 0 20 40 60 80 -50 0 50 100 150 200 t j / o c r on / mohm v bg = 6 v 9 v =< v bg =< 35 v typ . BUK210-50Y r on / mohm 20 22 24 26 28 30 32 34 36 38 40 1 10 100 v bg / v BUK210-50Y r on max 0 10 20 30 40 50 012 v bl / v i l / a BUK210-50Y 5 6 7 v bg / v > = 8 0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 200 t j / o c i g / ma ll > il(to) v bg = 50 v 9 v <= v bg <= 35 v typ. l l = 0 a l l > i l(to) BUK210-50Y november 2002 7 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch fig.10. typical supply quiescent current. i b = f(t j ); condition v bg = 16 v, v ig = 0 v, v lg = 0 v fig.11. typical off-state leakage current. i l = f(t j ); conditions v bl = 16 v = v bg , v ig = 0 v. fig.12. status leakage current. i s = f(t j ); conditions v sg = 5 v, v ig = v bg = 0 v fig.13. low load current detection threshold. i l(oc) = f(t j ); conditions v ig = 5 v; v bg 9 v fig.14. supply undervoltage thresholds. v bg(uv) = f(t j ); conditions v ig = 5 v; v bl 2 v fig.15. supply overvoltage thresholds. v bg(ov) = f(t j ); conditions v ig = 5 v; i l = 100 ma 100e-12 1e-9 10e-9 100e-9 1e-6 10e-6 100e-6 -50 0 50 100 150 200 i b / a BUK210-50Y t j / o c max. typ. 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 t j / o c i l(oc) / a typ. min. max. BUK210-50Y 10e-12 00e-12 1e-9 10e-9 100e-9 1e-6 10e-6 100e-6 -50 0 50 100 150 200 t j / o c i l / a max. typ. BUK210-50Y 2.5 3.5 4.5 5.5 -50 0 50 100 150 200 t j / o c v bg(uv) / v typ. on off BUK210-50Y 1e-9 10e-9 100e-9 1e-6 10e-6 100e-6 -50 0 50 100 150 200 t j / o c i s / a max. typ. BUK210-50Y 35 40 45 50 55 -50 0 50 100 150 200 t j / o c BUK210-50Y v bg(ov) / v max. min. off on november 2002 8 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch fig.16. typical status low characteristic. v sg = f(t j ); conditions v bg 9 v, i s = 100 a fig.17. typical threshold voltage characteristic. v ig = f(t j ); condition 9v v bg 16v fig.18. typical input clamping voltage. v ig = f(t j ); condition i i = 200 a, v bg = 13v fig.19. typical status low characteristic, t j = 25 ?c. i s = f(v sg ); conditions v ig = 5v, v bg = 13v,i l = 0a fig.20. typical status clamping voltage. v sg = f(t j ); condition i s = 100 a, v bg = 13v fig.21. typical status characteristic, t j = 25 ?c. i s = f(v sg ); conditions v ig = v bg = 0v v sg(low) / v 0 0.5 1 -50 0 50 100 150 200 t j / o c BUK210-50Y i s / ma 0 2 4 6 8 012345 v sg / v BUK210-50Y 1.00 1.50 2.00 2.50 3.00 -50 0 50 100 150 200 t j / o c BUK210-50Y v ig / v v ig(on) v ig(off) 6.50 6.60 6.70 6.80 6.90 7.00 7.10 7.20 7.30 7.40 7.50 -50 0 50 100 150 200 t j / o c v sg / v BUK210-50Y v ig / v = 0 5 6.50 6.60 6.70 6.80 6.90 7.00 7.10 7.20 7.30 7.40 7.50 -50 0 50 100 150 200 t j / o c v ig / v BUK210-50Y i s / ma 0 5 10 15 20 0246810 v sg / v BUK210-50Y november 2002 9 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch fig.22. typical battery to ground clamping voltage. v bg = f(t j ); parameter i g fig.23. typical battery to load clamping voltage. v bl = f(t j ); parameter i l ; condition i g = 10ma fig.24. typical negative load clamping. i l = f(v lg ); conditions v ig = = 0v, t j = 25?c fig.25. typical negative load clamping voltage. v lg = f(t j ); parameter i l ; condition v ig = = 0v fig.26. typical reverse diode characteristic. i l = f(v bl ); conditions v ig = 0 v, t j = 25 ?c fig.27. typical overload characteristic, t mb = 25 ?c. i l = f(v bl ); condition v bg = 16 v; parameter t p 50 55 60 65 -50 0 50 100 150 200 t j / o c v bg / v BUK210-50Y i g = 1 ma 200 ma -30 -25 -20 -15 -10 -50 0 50 100 150 200 t j / o c BUK210-50Y i l = 10 ma 10 a v lg / v 50 55 60 65 -50 0 50 100 150 200 t j / o c BUK210-50Y i l = 1 ma 600 ma v bl / v i l / a -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 v bl / v BUK210-50Y i l / a 0 5 10 -30 -25 -20 -15 -10 v lg / v BUK210-50Y i l / a 0 5 10 15 20 25 30 35 40 45 50 02468101214161820 v bl / v BUK210-50Y short circuit trip = 150us v bl(to) typ. current limiting november 2002 10 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch fig.28. short circuit load threshold voltage. v bl(to) = f(v bg ); conditions -40?c t mb 150?c fig.29. typical output capacitance. t mb = 25 ?c c bl = f(v bl ); conditions f = 1 mhz, v ig = 0 v fig.30. typical reverse battery characteristic. i g = f(v bg ); conditions i l = 0 a, t j = 25 ?c fig.31. typical overload current, v bl = 8v. i l = f(t j ); parameter v bg = 13v;t p = 300 s fig.32. typical short circuit load threshold voltage. v bl(to) = f(t j ); condition v bg = 16 v fig.33. transient thermal impedance. z th j-mb = f(t); parameter d = t p /t 0 5 10 15 20 25 30 35 0 1020304050 v bg / v v bl(to) / v min. max. typ. 25 ? c buk215-50y 30 35 40 45 50 -50 0 50 100 150 200 t j / o c i l(lim) / a BUK210-50Y 0 1020304050 10 nf 1nf 100pf c bl v bl / v BUK210-50Y v bl(to) / v 10.0 10.2 10.4 10.6 10.8 11.0 11.2 11.4 11.6 11.8 12.0 -50 0 50 100 150 200 BUK210-50Y t j / o c i g / ma -200 -150 -100 -50 0 -20 -15 -10 -5 0 v bg / v BUK210-50Y d = t p t p t t p t d BUK210-50Y zth j-mb ( k / w ) t / s 1e+02 1e-01 1e-03 1e-05 1e-07 1e+01 1e-03 1e-02 1e-01 1e+00 d = 0.5 0.2 0.1 0.05 0.02 0 november 2002 11 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch mechanical data fig.34. sot263b package 1 leadform 263b-01, pin 3 connected to mounting base. references outline version european projection issue date iec jedec eiaj sot263b-01 5-lead (option) to-220 d d 1 q l 15 l 3 mounting base l 4 m e q b 0 5 10 mm scale plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead to-220 lead form option sot263b-01 unit a 1 d 1 el ? p mm 1.7 l 1 l 2 q 3.0 2.7 4.5 4.1 1.39 1.27 0.85 0.70 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 9.8 9.7 5.9 5.3 5.2 5.0 2.4 1.6 0.8 0.6 3.8 3.6 p 1 4.3 4.1 q 1 q 2.0 4.5 q 2 8.2 r 0.5 w 0.4 dimensions (mm are the original dimensions) a b d c 0.5 l 3 (1) l 4 (2) max. e m a a 1 c q 1 q 2 notes 1. terminal dimensions are uncontrolled in this zone. 2. positional accuracy of the terminals is controlled in this zone. l 1 l 2 r r w m 01-01-11 ? p p 1 e 1 refer to mounting instructions for to220 envelopes. epoxy meets ul94 vo at 1/8". net mass: 2 g november 2002 12 rev 2.000
philips semiconductors product specification powermos transistor BUK210-50Y topfet high side switch definitions data sheet status data sheet product definitions status 1 status 2 objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice preliminary data qualification this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change notification (cpcn) procedure snw-sq-650a limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. ? philips electronics n.v. 2002 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. 1 please consult the most recently issued datasheet before initiating or completing a design. 2 the product status of the device(s) described in this datasheet may have changed since this datasheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. november 2002 13 rev 2.000

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